Cu(In,Ga)Se2 absorbers from stacked nanoparticle precursor layers
Identifieur interne : 000F81 ( Main/Repository ); précédent : 000F80; suivant : 000F82Cu(In,Ga)Se2 absorbers from stacked nanoparticle precursor layers
Auteurs : RBID : Pascal:13-0229240Descripteurs français
- Pascal (Inist)
- Nanoparticule, Nanomatériau, Précurseur, Dispersion, Sélénium, Mode empilement, Frittage, Cellule solaire, Stoechiométrie, Porosité, Dépôt sous vide, Séléniure d'indium, Chalcopyrite, Dispositif couche mince, Cuivre, Gallium, Multicouche, Séléniure de cuivre, Séléniure de gallium, 8107, 8460J, 8115E.
- Wicri :
- concept : Cuivre.
English descriptors
- KwdEn :
Abstract
The following paper presents a processing route for Cu(In,Ga)Se2 absorber layers that is based on nanoparticle dispersions which are applied by doctor blade deposition and converted with elemental selenium vapors. In particular, the preparation of the precursor layers is investigated by systematically assessing the influence of the stacking sequence of mono- and multi-metallic layers on sintering, elemental distribution and solar cell efficiency. By applying suitable stacking sequences, precursor layers with both local Cu-rich and over-all Cu-poor stoichiometry could be prepared that allowed improved sintering properties and modifications of the gallium gradient. Despite the still prevailing porosity of the absorber layer, solar cells with efficiencies exceeding 5% could be obtained.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Cu(In,Ga)Se<sub>2 </sub>absorbers from stacked nanoparticle precursor layers</title><author><name sortKey="Uhl, A R" uniqKey="Uhl A">A. R. Uhl</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratory for Thin Films and Photovoltaics, Empa, Swiss Federal Laboratories for Materials Science and Technology</s1><s2>8600 Duebendorf</s2><s3>CHE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Suisse</country><wicri:noRegion>8600 Duebendorf</wicri:noRegion></affiliation></author><author><name sortKey="Koller, M" uniqKey="Koller M">M. Koller</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratory for Thin Films and Photovoltaics, Empa, Swiss Federal Laboratories for Materials Science and Technology</s1><s2>8600 Duebendorf</s2><s3>CHE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Suisse</country><wicri:noRegion>8600 Duebendorf</wicri:noRegion></affiliation></author><author><name sortKey="Wallerand, A S" uniqKey="Wallerand A">A. S. Wallerand</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratory for Thin Films and Photovoltaics, Empa, Swiss Federal Laboratories for Materials Science and Technology</s1><s2>8600 Duebendorf</s2><s3>CHE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Suisse</country><wicri:noRegion>8600 Duebendorf</wicri:noRegion></affiliation></author><author><name sortKey="Fella, C M" uniqKey="Fella C">C. M. Fella</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratory for Thin Films and Photovoltaics, Empa, Swiss Federal Laboratories for Materials Science and Technology</s1><s2>8600 Duebendorf</s2><s3>CHE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Suisse</country><wicri:noRegion>8600 Duebendorf</wicri:noRegion></affiliation></author><author><name sortKey="Kranz, L" uniqKey="Kranz L">L. Kranz</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratory for Thin Films and Photovoltaics, Empa, Swiss Federal Laboratories for Materials Science and Technology</s1><s2>8600 Duebendorf</s2><s3>CHE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Suisse</country><wicri:noRegion>8600 Duebendorf</wicri:noRegion></affiliation></author><author><name sortKey="Hagendorfer, H" uniqKey="Hagendorfer H">H. Hagendorfer</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratory for Thin Films and Photovoltaics, Empa, Swiss Federal Laboratories for Materials Science and Technology</s1><s2>8600 Duebendorf</s2><s3>CHE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Suisse</country><wicri:noRegion>8600 Duebendorf</wicri:noRegion></affiliation></author><author><name sortKey="Romanyuk, Y E" uniqKey="Romanyuk Y">Y. E. Romanyuk</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratory for Thin Films and Photovoltaics, Empa, Swiss Federal Laboratories for Materials Science and Technology</s1><s2>8600 Duebendorf</s2><s3>CHE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Suisse</country><wicri:noRegion>8600 Duebendorf</wicri:noRegion></affiliation></author><author><name sortKey="Tiwari, A N" uniqKey="Tiwari A">A. N. Tiwari</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratory for Thin Films and Photovoltaics, Empa, Swiss Federal Laboratories for Materials Science and Technology</s1><s2>8600 Duebendorf</s2><s3>CHE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Suisse</country><wicri:noRegion>8600 Duebendorf</wicri:noRegion></affiliation></author><author><name sortKey="Yoon, S" uniqKey="Yoon S">S. Yoon</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Laboratory for Solid State Chemistry and Catalysis, Empa, Swiss Federal Laboratories for Materials Science and Technology</s1><s2>8600 Duebendorf</s2><s3>CHE</s3><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Suisse</country><wicri:noRegion>8600 Duebendorf</wicri:noRegion></affiliation></author><author><name sortKey="Weidenkaff, A" uniqKey="Weidenkaff A">A. Weidenkaff</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Laboratory for Solid State Chemistry and Catalysis, Empa, Swiss Federal Laboratories for Materials Science and Technology</s1><s2>8600 Duebendorf</s2><s3>CHE</s3><sZ>9 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>Suisse</country><wicri:noRegion>8600 Duebendorf</wicri:noRegion></affiliation></author><author><name sortKey="Friedlmeier, T M" uniqKey="Friedlmeier T">T. M. Friedlmeier</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Zentrum für Sonnenenergie-und Wasserstoff-Forschung (ZSW)</s1><s2>70565 Stuttgart</s2><s3>DEU</s3><sZ>11 aut.</sZ><sZ>12 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>70565 Stuttgart</wicri:noRegion><wicri:noRegion>Zentrum für Sonnenenergie-und Wasserstoff-Forschung (ZSW)</wicri:noRegion><wicri:noRegion>Zentrum für Sonnenenergie-und Wasserstoff-Forschung (ZSW)</wicri:noRegion></affiliation></author><author><name sortKey="Ahlswede, E" uniqKey="Ahlswede E">E. Ahlswede</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Zentrum für Sonnenenergie-und Wasserstoff-Forschung (ZSW)</s1><s2>70565 Stuttgart</s2><s3>DEU</s3><sZ>11 aut.</sZ><sZ>12 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>70565 Stuttgart</wicri:noRegion><wicri:noRegion>Zentrum für Sonnenenergie-und Wasserstoff-Forschung (ZSW)</wicri:noRegion><wicri:noRegion>Zentrum für Sonnenenergie-und Wasserstoff-Forschung (ZSW)</wicri:noRegion></affiliation></author><author><name sortKey="Vangenechten, D" uniqKey="Vangenechten D">D. Vangenechten</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Umicore S.A.</s1><s2>2250 Olen</s2><s3>BEL</s3><sZ>13 aut.</sZ><sZ>14 aut.</sZ></inist:fA14><country>Belgique</country><wicri:noRegion>Umicore S.A.</wicri:noRegion></affiliation></author><author><name sortKey="Stassin, F" uniqKey="Stassin F">F. Stassin</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Umicore S.A.</s1><s2>2250 Olen</s2><s3>BEL</s3><sZ>13 aut.</sZ><sZ>14 aut.</sZ></inist:fA14><country>Belgique</country><wicri:noRegion>Umicore S.A.</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0229240</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0229240 INIST</idno><idno type="RBID">Pascal:13-0229240</idno><idno type="wicri:Area/Main/Corpus">000B08</idno><idno type="wicri:Area/Main/Repository">000F81</idno></publicationStmt><seriesStmt><idno type="ISSN">0040-6090</idno><title level="j" type="abbreviated">Thin solid films</title><title level="j" type="main">Thin solid films</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Chalcopyrite</term><term>Copper</term><term>Copper selenides</term><term>Dispersions</term><term>Gallium</term><term>Gallium selenides</term><term>Indium selenides</term><term>Multilayers</term><term>Nanoparticles</term><term>Nanostructured materials</term><term>Porosity</term><term>Precursor</term><term>Selenium</term><term>Sintering</term><term>Solar cells</term><term>Stacking sequence</term><term>Stoichiometry</term><term>Thin film devices</term><term>Vacuum deposition</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Nanoparticule</term><term>Nanomatériau</term><term>Précurseur</term><term>Dispersion</term><term>Sélénium</term><term>Mode empilement</term><term>Frittage</term><term>Cellule solaire</term><term>Stoechiométrie</term><term>Porosité</term><term>Dépôt sous vide</term><term>Séléniure d'indium</term><term>Chalcopyrite</term><term>Dispositif couche mince</term><term>Cuivre</term><term>Gallium</term><term>Multicouche</term><term>Séléniure de cuivre</term><term>Séléniure de gallium</term><term>8107</term><term>8460J</term><term>8115E</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Cuivre</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The following paper presents a processing route for Cu(In,Ga)Se<sub>2</sub> absorber layers that is based on nanoparticle dispersions which are applied by doctor blade deposition and converted with elemental selenium vapors. In particular, the preparation of the precursor layers is investigated by systematically assessing the influence of the stacking sequence of mono- and multi-metallic layers on sintering, elemental distribution and solar cell efficiency. By applying suitable stacking sequences, precursor layers with both local Cu-rich and over-all Cu-poor stoichiometry could be prepared that allowed improved sintering properties and modifications of the gallium gradient. Despite the still prevailing porosity of the absorber layer, solar cells with efficiencies exceeding 5% could be obtained.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0></fA01><fA02 i1="01"><s0>THSFAP</s0></fA02><fA03 i2="1"><s0>Thin solid films</s0></fA03><fA05><s2>535</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Cu(In,Ga)Se<sub>2 </sub>absorbers from stacked nanoparticle precursor layers</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>E-MRS 2012 Symposium B</s1></fA09><fA11 i1="01" i2="1"><s1>UHL (A. R.)</s1></fA11><fA11 i1="02" i2="1"><s1>KOLLER (M.)</s1></fA11><fA11 i1="03" i2="1"><s1>WALLERAND (A. S.)</s1></fA11><fA11 i1="04" i2="1"><s1>FELLA (C. M.)</s1></fA11><fA11 i1="05" i2="1"><s1>KRANZ (L.)</s1></fA11><fA11 i1="06" i2="1"><s1>HAGENDORFER (H.)</s1></fA11><fA11 i1="07" i2="1"><s1>ROMANYUK (Y. E.)</s1></fA11><fA11 i1="08" i2="1"><s1>TIWARI (A. N.)</s1></fA11><fA11 i1="09" i2="1"><s1>YOON (S.)</s1></fA11><fA11 i1="10" i2="1"><s1>WEIDENKAFF (A.)</s1></fA11><fA11 i1="11" i2="1"><s1>FRIEDLMEIER (T. M.)</s1></fA11><fA11 i1="12" i2="1"><s1>AHLSWEDE (E.)</s1></fA11><fA11 i1="13" i2="1"><s1>VANGENECHTEN (D.)</s1></fA11><fA11 i1="14" i2="1"><s1>STASSIN (F.)</s1></fA11><fA12 i1="01" i2="1"><s1>EDOFF (Marika)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>ROMEO (Alessandro)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>SCHEER (Roland)</s1><s9>ed.</s9></fA12><fA12 i1="04" i2="1"><s1>SHAFARMAN (William)</s1><s9>ed.</s9></fA12><fA12 i1="05" i2="1"><s1>KATAGIRI (Hirono)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Laboratory for Thin Films and Photovoltaics, Empa, Swiss Federal Laboratories for Materials Science and Technology</s1><s2>8600 Duebendorf</s2><s3>CHE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></fA14><fA14 i1="02"><s1>Laboratory for Solid State Chemistry and Catalysis, Empa, Swiss Federal Laboratories for Materials Science and Technology</s1><s2>8600 Duebendorf</s2><s3>CHE</s3><sZ>9 aut.</sZ><sZ>10 aut.</sZ></fA14><fA14 i1="03"><s1>Zentrum für Sonnenenergie-und Wasserstoff-Forschung (ZSW)</s1><s2>70565 Stuttgart</s2><s3>DEU</s3><sZ>11 aut.</sZ><sZ>12 aut.</sZ></fA14><fA14 i1="04"><s1>Umicore S.A.</s1><s2>2250 Olen</s2><s3>BEL</s3><sZ>13 aut.</sZ><sZ>14 aut.</sZ></fA14><fA18 i1="01" i2="1"><s1>European Materials Research Society (E-MRS)</s1><s2>Strasbourg</s2><s3>FRA</s3><s9>org-cong.</s9></fA18><fA20><s1>138-142</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13597</s2><s5>354000504170550300</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>19 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0229240</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Thin solid films</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>The following paper presents a processing route for Cu(In,Ga)Se<sub>2</sub> absorber layers that is based on nanoparticle dispersions which are applied by doctor blade deposition and converted with elemental selenium vapors. In particular, the preparation of the precursor layers is investigated by systematically assessing the influence of the stacking sequence of mono- and multi-metallic layers on sintering, elemental distribution and solar cell efficiency. By applying suitable stacking sequences, precursor layers with both local Cu-rich and over-all Cu-poor stoichiometry could be prepared that allowed improved sintering properties and modifications of the gallium gradient. Despite the still prevailing porosity of the absorber layer, solar cells with efficiencies exceeding 5% could be obtained.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A07Z</s0></fC02><fC02 i1="02" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="03" i2="3"><s0>001B80A15E</s0></fC02><fC02 i1="04" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Nanoparticule</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Nanoparticles</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Nanomatériau</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Nanostructured materials</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Précurseur</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Precursor</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Dispersion</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Dispersions</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Sélénium</s0><s2>NC</s2><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Selenium</s0><s2>NC</s2><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Mode empilement</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Stacking sequence</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Modo apilamiento</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Frittage</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Sintering</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Cellule solaire</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Solar cells</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Stoechiométrie</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Stoichiometry</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Porosité</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Porosity</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Dépôt sous vide</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Vacuum deposition</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Séléniure d'indium</s0><s2>NK</s2><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Indium selenides</s0><s2>NK</s2><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Chalcopyrite</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Chalcopyrite</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Dispositif couche mince</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Thin film devices</s0><s5>14</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Cuivre</s0><s2>NC</s2><s5>15</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Copper</s0><s2>NC</s2><s5>15</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Gallium</s0><s2>NC</s2><s5>16</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Gallium</s0><s2>NC</s2><s5>16</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Multicouche</s0><s5>17</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Multilayers</s0><s5>17</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Séléniure de cuivre</s0><s2>NK</s2><s5>18</s5></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Copper selenides</s0><s2>NK</s2><s5>18</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Séléniure de gallium</s0><s2>NK</s2><s5>19</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Gallium selenides</s0><s2>NK</s2><s5>19</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>8107</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>8460J</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>8115E</s0><s4>INC</s4><s5>73</s5></fC03><fN21><s1>210</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>E-MRS Spring Meeting 2012. Symposium B "Thin Film Chalcogenide Photovoltaic Materials"</s1><s3>Strasbourg FRA</s3><s4>2012-05-14</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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